参数项参数值
参数项参数值
Gain Bandwidth Product fT50 MHz
Collector- Base Voltage VCBO300 V
Maximum DC Collector Current0.2 A
Collector- Emitter Voltage VCEO Max300 V
Continuous Collector Current0.2 A
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO6 V
MXHTS85412101
Collector-Emitter Saturation Voltage0.5 V
Width1.35 mm
DC Collector/Base Gain hfe Min25
Height1 mm
Length2.2 mm
KRHTS8541219000
Package / CaseSOT-323-3
CNHTS8541210000
JPHTS8541210101
Mounting StyleSMD/SMT
CAHTS8541210000
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
PackagingCut Tape
PackagingMouseReel
PackagingReel
ImageDiodes Incorporated MMSTA42-7-F
TARIC8541210000
RoHS Details
Factory Pack Quantity3000
SeriesMMSTA
ManufacturerDiodes Incorporated
Unit Weight0.000176 oz
BrandDiodes Incorporated
Product TypeBJTs - Bipolar Transistors
DescriptionBipolar Transistors - BJT 300V 200mW
Product CategoryBipolar Transistors - BJT
Pd - Power Dissipation200 mW
SubcategoryTransistors
USHTS8541210095