参数项参数值
参数项参数值
ConfigurationSingle
Forward Transconductance - Min38 S
Vgs th - Gate-Source Threshold Voltage1.2 V
TechnologySi
Transistor PolarityN-Channel
Id - Continuous Drain Current57 A
ImageInfineon Technologies BSC052N03LS
Vgs - Gate-Source Voltage- 20 V, + 20 V
Minimum Operating Temperature- 55 C
DescriptionMOSFET N-Ch 30V 57A TDSON-8 OptiMOS
Height1.27 mm
Length5.9 mm
Typical Turn-On Delay Time2.4 ns
Rds On - Drain-Source Resistance5.2 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time13 ns
PackagingMouseReel
PackagingReel
PackagingCut Tape
Package / CasePG-TDSON-8
Maximum Operating Temperature+ 150 C
Product CategoryMOSFET
Factory Pack Quantity5000
Width5.15 mm
Mounting StyleSMD/SMT
Product TypeMOSFET
BrandInfineon Technologies
ManufacturerInfineon
Qg - Gate Charge12 nC
RoHS Details
SubcategoryMOSFETs
Channel ModeEnhancement
Fall Time2.4 ns
Unit Weight0.003527 oz
Part # AliasesBSC52N3LSXT SP000807602 BSC052N03LSATMA1
Pd - Power Dissipation28 W
TradenameOptiMOS
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels1 Channel
Rise Time3.6 ns