参数项参数值
参数项参数值
Forward Transconductance - Min0.8 S
TechnologySi
ConfigurationSingle
Id - Continuous Drain Current460 mA
Transistor PolarityP-Channel
Rds On - Drain-Source Resistance1.1 Ohms
Transistor Type1 P-Channel
Typical Turn-Off Delay Time55 ns
Vgs - Gate-Source Voltage- 8 V, + 8 V
MXHTS85412101
Typical Turn-On Delay Time6 ns
Width1.3 mm
KRHTS8541219000
Height1.2 mm
JPHTS8541210101
Length2.9 mm
CNHTS8541210000
CAHTS8541210000
Qg - Gate Charge1.5 nC
Product TypeMOSFET
Package / CaseSOT-23-3
Maximum Operating Temperature+ 150 C
Channel ModeEnhancement
Mounting StyleSMD/SMT
Minimum Operating Temperature- 55 C
ProductMOSFET Small Signal
PackagingCut Tape
PackagingMouseReel
PackagingReel
Fall Time8 ns
TARIC8541210000
BrandON Semiconductor / Fairchild
Unit Weight0.000282 oz
Factory Pack Quantity3000
RoHS Details
SeriesFDV304P
ImageON Semiconductor / Fairchild FDV304P
Pd - Power Dissipation350 mW
Product CategoryMOSFET
Part # AliasesFDV304P_NL
TypeMOSFET
ManufacturerON Semiconductor
SubcategoryMOSFETs
USHTS8541210095
Vds - Drain-Source Breakdown Voltage25 V
DescriptionMOSFET P-Ch Digital
Number of Channels1 Channel
Rise Time8 ns
Moisture Sensitivity Level1 (Unlimited)