参数项参数值
参数项参数值
DC Current Gain hFE Max300 at 1 mA, 5 V
Gain Bandwidth Product fT150 MHz
Collector- Base Voltage VCBO- 80 V
Maximum DC Collector Current1 A
Collector- Emitter Voltage VCEO Max- 60 V
Continuous Collector Current- 1 A
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO- 5 V
Width1.4 mm
Collector-Emitter Saturation Voltage- 0.5 V
Height1 mm
DC Collector/Base Gain hfe Min300 at 1 mA, 5 V, 300 at 100 mA, 5 V, 250 at 500 mA, 5 V, 160 at 1 A, 5 V, 30 at 2 A, 5 V
Length3.05 mm
MXHTS85412999
KRHTS8541299000
Mounting StyleSMD/SMT
Package / CaseSOT-23-3
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
CNHTS8541290000
TARIC8541210000
RoHS Details
PackagingCut Tape
PackagingMouseReel
PackagingReel
ImageDiodes Incorporated FMMT591ATC
SubcategoryTransistors
BrandDiodes Incorporated
ManufacturerDiodes Incorporated
Factory Pack Quantity10000
SeriesFMMT59
Unit Weight0.000282 oz
USHTS8541290095
Product CategoryBipolar Transistors - BJT
Product TypeBJTs - Bipolar Transistors
DescriptionBipolar Transistors - BJT PNP Medium Power
Pd - Power Dissipation500 mW
Moisture Sensitivity Level1 (Unlimited)