参数项参数值
参数项参数值
Forward Transconductance - Min4 S
TechnologySi
ConfigurationSingle
Id - Continuous Drain Current1.1 A
Transistor PolarityP-Channel
Vgs th - Gate-Source Threshold Voltage1.5 V
Rds On - Drain-Source Resistance230 mOhms
Transistor Type1 P-Channel
Typical Turn-Off Delay Time12.2 ns
MXHTS85412999
Vgs - Gate-Source Voltage- 20 V, + 20 V
KRHTS8541219000
QualificationAEC-Q101
Typical Turn-On Delay Time6.6 ns
Qg - Gate Charge2.3 nC
Package / CaseSOT-23-3
CNHTS8541210000
JPHTS8541290100
CAHTS8541290000
Mounting StyleSMD/SMT
Minimum Operating Temperature- 55 C
Channel ModeEnhancement
Maximum Operating Temperature+ 150 C
PackagingCut Tape
PackagingMouseReel
PackagingReel
ImageON Semiconductor NVR5124PLT1G
Fall Time3.5 ns
TARIC8541290000
RoHS Details
Factory Pack Quantity3000
SeriesNVR5124PL
BrandON Semiconductor
Unit Weight0.000282 oz
ManufacturerON Semiconductor
DescriptionMOSFET T1 60V PCH
Product TypeMOSFET
Product CategoryMOSFET
Pd - Power Dissipation- 0.47 W
SubcategoryMOSFETs
USHTS8541210095
Vds - Drain-Source Breakdown Voltage60 V
Number of Channels1 Channel
Rise Time10.6 ns
Moisture Sensitivity Level1 (Unlimited)