参数项参数值
参数项参数值
TechnologySi
Id - Continuous Drain Current360 mA
ConfigurationSingle
Transistor PolarityN-Channel
Vgs th - Gate-Source Threshold Voltage900 mV
Rds On - Drain-Source Resistance1.6 Ohms
Transistor Type1 N-Channel Trench MOSFET
Typical Turn-Off Delay Time9 ns
Vgs - Gate-Source Voltage- 20 V, + 20 V
QualificationAEC-Q101
Mounting StyleSMD/SMT
MXHTS85412101
ImageNexperia BSS138P,215
KRHTS8541219000
Maximum Operating Temperature+ 150 C
JPHTS8541210101
Channel ModeEnhancement
Package / CaseSOT-23-3
Minimum Operating Temperature- 55 C
CAHTS8541210000
CNHTS8541210000
Fall Time4 ns
ProductMOSFET Small Signal
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8536699099
RoHS Details
Unit Weight0.000882 oz
BrandNexperia
DescriptionMOSFET N-CH 60 V 360 mA
Part # Aliases934064988215
ManufacturerNexperia
Product TypeMOSFET
Factory Pack Quantity3000
SubcategoryMOSFETs
Vds - Drain-Source Breakdown Voltage60 V
Product CategoryMOSFET
USHTS8541210095
Number of Channels1 Channel
Rise Time3 ns
Moisture Sensitivity Level1 (Unlimited)