参数项参数值
参数项参数值
DC Current Gain hFE Max270 at 10 mA, 2 V
Gain Bandwidth Product fT320 MHz
Collector- Base Voltage VCBO15 V
Maximum DC Collector Current0.5 A
Collector- Emitter Voltage VCEO Max12 V
ConfigurationDual
Transistor PolarityNPN
TechnologySi
Emitter- Base Voltage VEBO6 V
Height0.5 mm
DC Collector/Base Gain hfe Min270
JPHTS8541290100
Length1.6 mm
CAHTS8541290000
MXHTS85412999
Width1.2 mm
KRHTS8541299000
USHTS8541290095
Mounting StyleSMD/SMT
Product TypeBJTs - Bipolar Transistors
Package / CaseEMT-6
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
CNHTS8541210000
SubcategoryTransistors
TARIC8541290000
ManufacturerROHM Semiconductor
RoHS Details
ImageROHM Semiconductor EMX18T2R
PackagingCut Tape
PackagingMouseReel
PackagingReel
SeriesEMX18
BrandROHM Semiconductor
Unit Weight0.000606 oz
Product CategoryBipolar Transistors - BJT
Factory Pack Quantity8000
DescriptionBipolar Transistors - BJT DUAL NPN 12V 500MA
Part # AliasesEMX18
Pd - Power Dissipation150 mW
Moisture Sensitivity Level1 (Unlimited)