NVMFS5C404NLAFT1G

厂牌:ONSEMI
包装:REEL 1
类目:元器件 > 分立器件 > MOSFET
编号:B000052917176
描述:ONSEMI - NVMFS5C404NLAFT1G - 功率场效应管, MOSFET, N通道, 40 V, 370 A, 670 µohm, DFN, 表面安装 库存分布:; packSize: 1; minimumOrderQty: 1; rohs: Y-EX
最新价格近期成交20单+
数量价格(含税)
1¥52.2310
10¥27.2956
100¥24.8600
500¥22.2359
1000¥20.9174
库存:0交期:2 weeks起订:1增量:1
数量:
X
52.2310(单价)
合计:
¥52.23
商品满500包邮
商品参数
参数项参数值
参数项参数值
ConfigurationSingle
Forward Transconductance - Min270 S
Id - Continuous Drain Current370 A
Transistor PolarityN-Channel
Vgs th - Gate-Source Threshold Voltage1.2 V
TechnologySi
Rds On - Drain-Source Resistance520 uOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time87 ns
Vgs - Gate-Source Voltage- 20 V, + 20 V
QualificationAEC-Q101
Typical Turn-On Delay Time24 ns
BrandON Semiconductor
SeriesNVMFS5C404NL
MXHTS85412999
KRHTS8541299000
SubcategoryMOSFETs
Qg - Gate Charge181 nC
Package / CaseSO-8
Mounting StyleSMD/SMT
JPHTS8541290100
CAHTS8541290000
PackagingReel
PackagingCut Tape
PackagingMouseReel
CNHTS8541290000
Minimum Operating Temperature- 55 C
Product CategoryMOSFET
Maximum Operating Temperature+ 175 C
TARIC8541290000
Channel ModeEnhancement
Factory Pack Quantity1500
RoHS Details
ManufacturerON Semiconductor
Product TypeMOSFET
Fall Time157 ns
DescriptionMOSFET T6 40V HEFET
ImageON Semiconductor NVMFS5C404NLAFT1G
Unit Weight0.003970 oz
USHTS8541290095
Vds - Drain-Source Breakdown Voltage40 V
Number of Channels1 Channel
Rise Time135 ns