RQ3G100GNTB

厂牌：Rohm Semiconductor

包装：REEL 1

类目：元器件 > 分立器件 > MOSFET

编号：B000052917362

描述：MOSFET N-CH 40V 10A HSMT-8; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.011ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V; Power Dissipation Pd:2W; Transistor Case Style:HSMT; No. of Pins:8Pins; Operating Temperature Max:150蚓; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (15-Jan-2018)

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商品参数

参数项参数值

ConfigurationSingle

Id - Continuous Drain Current10 A

Transistor PolarityN-Channel

Vgs th - Gate-Source Threshold Voltage1.2 V

TechnologySi

Rds On - Drain-Source Resistance11 mOhms

Transistor Type1 N-Channel

Typical Turn-Off Delay Time23.1 ns

Vgs - Gate-Source Voltage- 20 V, + 20 V

Package / CaseHSMT-8

Typical Turn-On Delay Time8 ns

Mounting StyleSMD/SMT

Minimum Operating Temperature- 55 C

TARIC8541290000

PackagingReel

PackagingCut Tape

PackagingMouseReel

ImageROHM Semiconductor RQ3G100GNTB

MXHTS85412999

KRHTS8541299000

ManufacturerROHM Semiconductor

DescriptionMOSFET Nch 40V 10A Power MOSFET

CAHTS8541290000

Qg - Gate Charge8.4 nC

JPHTS8541290100

Maximum Operating Temperature+ 150 C

CNHTS8541290000

Channel ModeEnhancement

Factory Pack Quantity3000

RoHS Details

Unit Weight0.196723 oz

SubcategoryMOSFETs

Fall Time3.2 ns

BrandROHM Semiconductor

Product CategoryMOSFET

Product TypeMOSFET

USHTS8541290095

Pd - Power Dissipation2 W

Part # AliasesRQ3G100GN

Vds - Drain-Source Breakdown Voltage40 V

Number of Channels1 Channel

Rise Time4.2 ns

Moisture Sensitivity Level1 (Unlimited)