参数项参数值
参数项参数值
Gain Bandwidth Product fT50 MHz
Collector- Base Voltage VCBO5 V
Maximum DC Collector Current10 A
Collector- Emitter Voltage VCEO Max80 V
Continuous Collector Current10 A
TechnologySi
ConfigurationSingle
Transistor PolarityNPN
Collector-Emitter Saturation Voltage1 V
Emitter- Base Voltage VEBO5 V
DC Collector/Base Gain hfe Min60
KRHTS8541219000
Width9.65 mm
Height4.83 mm
Maximum Operating Temperature+ 150 C
JPHTS8541100901
CAHTS8541100090
Length10.29 mm
MXHTS85412999
CNHTS8541290000
Package / CaseTO-263-3
Mounting StyleSMD/SMT
PackagingCut Tape
PackagingMouseReel
PackagingReel
Minimum Operating Temperature- 55 C
TARIC8541290000
Unit Weight0.050054 oz
RoHS Details
ImageON Semiconductor MJB44H11T4G
SeriesMJB44H11
BrandON Semiconductor
ManufacturerON Semiconductor
Pd - Power Dissipation50 W
Product TypeBJTs - Bipolar Transistors
Product CategoryBipolar Transistors - BJT
SubcategoryTransistors
Factory Pack Quantity800
USHTS8541210095
DescriptionBipolar Transistors - BJT 8A 80V 50W NPN
Moisture Sensitivity Level1 (Unlimited)