参数项参数值
参数项参数值
DC Current Gain hFE Max450
Gain Bandwidth Product fT175 MHz
Collector- Base Voltage VCBO- 50 V
Maximum DC Collector Current- 100 mA
Collector- Emitter Voltage VCEO Max- 45 V
Continuous Collector Current- 100 mA
ConfigurationDual
Transistor PolarityPNP
TechnologySi
Emitter- Base Voltage VEBO- 6 V
Collector-Emitter Saturation Voltage- 6 V
DC Collector/Base Gain hfe Min200
QualificationAEC-Q101
RoHS Details
PackagingCut Tape
PackagingReel
USHTS8541210075
Product TypeBJTs - Bipolar Transistors
Mounting StyleSMD/SMT
Package / CaseDFN-1010B-6
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
SubcategoryTransistors
TARIC8541210000
Factory Pack Quantity5000
ImageNexperia BCM857QASZ
BrandNexperia
Product CategoryBipolar Transistors - BJT
ManufacturerNexperia
DescriptionBipolar Transistors - BJT BCM857QAS DFN1010B-6
Part # Aliases934660013147
Pd - Power Dissipation350 mW