参数项参数值
参数项参数值
Forward Transconductance - Min80 mS
ConfigurationDual
TechnologySi
Id - Continuous Drain Current230 mA
Transistor PolarityN-Channel
Vgs th - Gate-Source Threshold Voltage1 V
Rds On - Drain-Source Resistance7.5 Ohms
Transistor Type2 N-Channel
Typical Turn-Off Delay Time11 ns
Vgs - Gate-Source Voltage- 20 V, + 20 V
Width1.35 mm
MXHTS85412101
Height1 mm
Typical Turn-On Delay Time7 ns
ProductMOSFET Small Signal
Length2.2 mm
KRHTS8541219000
CNHTS8541210000
RoHS Details
DescriptionMOSFET 60V 200mW
Package / CaseSOT-363-6
Maximum Operating Temperature+ 150 C
Mounting StyleSMD/SMT
Minimum Operating Temperature- 55 C
CAHTS8541210000
Channel ModeEnhancement
JPHTS8541210101
BrandDiodes Incorporated
TARIC8541210000
Series2N7002DW
PackagingCut Tape
PackagingMouseReel
PackagingReel
Product CategoryMOSFET
Unit Weight0.000212 oz
SubcategoryMOSFETs
ManufacturerDiodes Incorporated
Factory Pack Quantity3000
Product TypeMOSFET
Pd - Power Dissipation0.4 W
USHTS8541210095
TypeEnhancement Mode Field Effect Transistor
Vds - Drain-Source Breakdown Voltage70 V
Number of Channels2 Channel