参数项参数值
参数项参数值
ConfigurationDual
Id - Continuous Drain Current5 A
Transistor PolarityN-Channel
TechnologySi
Rds On - Drain-Source Resistance50 MOhms
Transistor Type2 N-Channel
Typical Turn-Off Delay Time26.2 ns
Height1.5 mm
Vgs - Gate-Source Voltage- 20 V, + 20 V
Width4 mm
Length5 mm
Typical Turn-On Delay Time3.8 ns
Mounting StyleSMD/SMT
CNHTS8541290000
Factory Pack Quantity500
MXHTS85412999
KRHTS8541299000
Unit Weight0.002610 oz
Qg - Gate Charge20.4 nC
JPHTS8541290100
Package / CaseSO-8
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
PackagingCut Tape
PackagingMouseReel
PackagingReel
SeriesZXMN6A2
Channel ModeEnhancement
Product CategoryMOSFET
ManufacturerDiodes Incorporated
TARIC8541290000
DescriptionMOSFET Dl 60V N-Chnl UMOS
BrandDiodes Incorporated
ImageDiodes Incorporated ZXMN6A25DN8TA
Fall Time10.6 ns
SubcategoryMOSFETs
Product TypeMOSFET
RoHS Details
USHTS8541290095
TypeMOSFET
Vds - Drain-Source Breakdown Voltage60 V
Number of Channels2 Channel
Rise Time4 ns