参数项参数值
参数项参数值
Forward Transconductance - Min75 mS
ConfigurationSingle
Id - Continuous Drain Current60 mA
Transistor PolarityN-Channel
Vgs th - Gate-Source Threshold Voltage1 V
TechnologySi
Rds On - Drain-Source Resistance25 Ohms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time6 ns
Vgs - Gate-Source Voltage- 20 V, + 20 V
Height1.02 mm
Width1.4 mm
Length3.04 mm
Typical Turn-On Delay Time5 ns
Mounting StyleSMD/SMT
MXHTS85412101
CNHTS8541210000
ProductMOSFET Small Signal
KRHTS8541219000
Qg - Gate Charge-
JPHTS8541210101
Package / CaseSOT-23-3
CAHTS8541210000
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
PackagingCut Tape
PackagingMouseReel
PackagingReel
SeriesZVN3320
Channel ModeEnhancement
Product TypeMOSFET
ManufacturerDiodes Incorporated
DescriptionMOSFET N-Chnl 200V
TARIC8541210000
Factory Pack Quantity3000
BrandDiodes Incorporated
ImageDiodes Incorporated ZVN3320FTA
Product CategoryMOSFET
Fall Time6 ns
RoHS Details
SubcategoryMOSFETs
Unit Weight0.000282 oz
Pd - Power Dissipation330 mW
USHTS8541210095
TypeFET
Vds - Drain-Source Breakdown Voltage200 V
Number of Channels1 Channel
Rise Time7 ns