参数项参数值
参数项参数值
DC Current Gain hFE Max80
Peak DC Collector Current100 mA
Collector- Emitter Voltage VCEO Max50 V
Continuous Collector Current100 mA
ConfigurationDual
Transistor PolarityNPN
Width1.7 mm
DC Collector/Base Gain hfe Min80
JPHTS8541290100
RoHS Details
MXHTS85412999
Length2 mm
KRHTS8541299000
ImageROHM Semiconductor UMG11NTR
PackagingCut Tape
PackagingMouseReel
PackagingReel
SubcategoryTransistors
Mounting StyleSMD/SMT
Product CategoryBipolar Transistors - Pre-Biased
Package / CaseTUMT-5
CAHTS8541290000
Maximum Operating Temperature+ 150 C
CNHTS8541290000
TARIC8541290000
BrandROHM Semiconductor
Product TypeBJTs - Bipolar Transistors - Pre-Biased
Factory Pack Quantity3000
ManufacturerROHM Semiconductor
SeriesUMG11N
USHTS8541290095
Pd - Power Dissipation300 mW
Part # AliasesUMG11N
Typical Resistor Ratio21
Typical Input Resistor2.2 kOhms