参数项参数值
参数项参数值
ProductOptiMOS Power
ConfigurationSingle
KRHTS8541299000
Forward Transconductance - Min50 S
JPHTS8541290100
Transistor PolarityN-Channel
Id - Continuous Drain Current100 A
Vgs th - Gate-Source Threshold Voltage2.1 V
TechnologySi
CAHTS8541290000
DescriptionMOSFET N-Ch 60V 100A TDSON-8 OptiMOS 3
ImageInfineon Technologies BSC028N06NSATMA1
Rds On - Drain-Source Resistance2.5 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time19 ns
Minimum Operating Temperature- 55 C
Vgs - Gate-Source Voltage- 20 V, + 20 V
PackagingCut Tape
PackagingMouseReel
PackagingReel
Package / CaseTDSON-8
Height1.27 mm
Length5.9 mm
Typical Turn-On Delay Time11 ns
Maximum Operating Temperature+ 150 C
Product CategoryMOSFET
Factory Pack Quantity5000
Mounting StyleSMD/SMT
Width5.15 mm
Product TypeMOSFET
ManufacturerInfineon
BrandInfineon Technologies
SeriesOptiMOS 5
MXHTS85412999
TARIC8541290000
RoHS Details
CNHTS8541210000
TradenameOptiMOS
SubcategoryMOSFETs
Channel ModeEnhancement
USHTS8541290095
Fall Time8 ns
Unit Weight0.004180 oz
Part # AliasesBSC028N06NS SP000917416
Pd - Power Dissipation83 W
TypeOptiMOS Power Transistor
Vds - Drain-Source Breakdown Voltage60 V
Number of Channels1 Channel
Rise Time38 ns
Moisture Sensitivity Level1 (Unlimited)