参数项参数值
参数项参数值
Gate-Emitter Leakage Current400 nA
Maximum Gate Emitter Voltage20 V
Collector- Emitter Voltage VCEO Max1200 V
ConfigurationSingle
TechnologySi
Width61.4 mm
Height36.5 mm
Collector-Emitter Saturation Voltage3.2 V
MXHTS85412999
KRHTS8541299000
DescriptionIGBT Modules N-CH 1.2KV 700A
BRHTS85415020
Unit Weight12 oz
Package / Case62 mm
JPHTS8541290100
Mounting StyleChassis Mount
CAHTS8541290000
Factory Pack Quantity10
PackagingTray
Minimum Operating Temperature- 40 C
Maximum Operating Temperature+ 125 C
BrandInfineon Technologies
ImageInfineon Technologies FZ600R12KS4
Product TypeIGBT Modules
ProductIGBT Silicon Modules
CNHTS8504409191
TARIC8541290000
ManufacturerInfineon
Product CategoryIGBT Modules
RoHS Details
SubcategoryIGBTs
Continuous Collector Current at 25 C700 A
Pd - Power Dissipation3900 W
Part # AliasesSP000100773 FZ600R12KS4HOSA1
USHTS8541290095