参数项参数值
参数项参数值
DC Current Gain hFE Max560
Gain Bandwidth Product fT140 MHz
Collector- Base Voltage VCBO- 60 V
Maximum DC Collector Current- 0.15 A
Collector- Emitter Voltage VCEO Max- 50 V
Continuous Collector Current- 0.15 A
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO- 6 V
Collector-Emitter Saturation Voltage- 0.5 V
Width0.8 mm
Height0.5 mm
Length1.2 mm
DC Collector/Base Gain hfe Min120
MXHTS85412999
KRHTS8541299000
JPHTS8541290100
Mounting StyleSMD/SMT
CAHTS8541290000
Minimum Operating Temperature- 55 C
PackagingMouseReel
PackagingReel
PackagingCut Tape
Maximum Operating Temperature+ 150 C
Factory Pack Quantity8000
CNHTS8541290000
DescriptionBipolar Transistors - BJT TRANSISTOR PNP GEN. PURPOSE HFE RANK 'R'
BrandROHM Semiconductor
Series2SA2029
Product TypeBJTs - Bipolar Transistors
TARIC8541290000
ManufacturerROHM Semiconductor
Product CategoryBipolar Transistors - BJT
RoHS Details
SubcategoryTransistors
Pd - Power Dissipation150 mW
USHTS8541290095
Moisture Sensitivity Level1 (Unlimited)