参数项参数值
参数项参数值
Gain Bandwidth Product fT300 MHz
Collector- Base Voltage VCBO50 V
Maximum DC Collector Current0.1 A
Collector- Emitter Voltage VCEO Max45 V
Continuous Collector Current0.1 A
TechnologySi
ConfigurationSingle
Transistor PolarityNPN
Collector-Emitter Saturation Voltage250 mV
Emitter- Base Voltage VEBO6 V
Width4.19 mm
Height5.33 mm
Mounting StyleThrough Hole
Length5.2 mm
JPHTS8541210101
Maximum Operating Temperature+ 150 C
MXHTS85412101
KRHTS8541219000
Minimum Operating Temperature- 65 C
Package / CaseTO-92-3 Kinked Lead
CAHTS8541210000
CNHTS8541210000
PackagingCut Tape
PackagingReel
TARIC8541210000
Unit Weight0.008466 oz
Pd - Power Dissipation500 mW
RoHS Details
BrandON Semiconductor / Fairchild
USHTS8541210095
DescriptionBipolar Transistors - BJT NPN Si Transistor Epitaxial
ImageON Semiconductor / Fairchild BC547CTFR
SeriesBC547
Factory Pack Quantity2000
Product TypeBJTs - Bipolar Transistors
Product CategoryBipolar Transistors - BJT
ManufacturerON Semiconductor
SubcategoryTransistors