参数项参数值
参数项参数值
Forward Transconductance - Min31 S
TechnologySi
ConfigurationSingle
Transistor PolarityP-Channel
Vgs th - Gate-Source Threshold Voltage1 V
Rds On - Drain-Source Resistance14.5 mOhms
Transistor Type1 P-Channel
Typical Turn-Off Delay Time205 ns
Vgs - Gate-Source Voltage- 20 V, + 20 V
MXHTS85412999
Typical Turn-On Delay Time20 ns
KRHTS8541299000
ImageVishay Semiconductors SI7461DP-T1-GE3
Qg - Gate Charge121 nC
CNHTS8541290000
USHTS8541290095
Minimum Operating Temperature- 55 C
CAHTS8541290000
Package / CasePowerPAK-SO-8
Mounting StyleSMD/SMT
Channel ModeEnhancement
JPHTS8541290100
Maximum Operating Temperature+ 150 C
RoHS Details
PackagingMouseReel
PackagingCut Tape
PackagingReel
Fall Time90 ns
SeriesSI7
TARIC8541290000
BrandVishay Semiconductors
Unit Weight0.017870 oz
Factory Pack Quantity3000
Product CategoryMOSFET
Product TypeMOSFET
SubcategoryMOSFETs
ManufacturerVishay
Pd - Power Dissipation5.4 W
Part # AliasesSI7461DP-GE3
DescriptionMOSFET -60V Vds 20V Vgs PowerPAK SO-8
Vds - Drain-Source Breakdown Voltage60 V
TradenameTrenchFET
Number of Channels1 Channel
Rise Time20 ns