NTMFD5C674NLT1G

厂牌:ONSEMI
包装:REEL 1
类目:元器件 > 分立器件 > MOSFET
编号:B000052948333
描述:ONSEMI - NTMFD5C674NLT1G - 双路场效应管, MOSFET, N通道, 60 V, 60 V, 42 A, 42 A, 0.0144 ohm 库存分布: Shanghai: 0 Shanghai: 0 Shanghai: 0 Shanghai: 0 Shanghai: 0 UK: 748 SG: 0; packSize: 1; minimumOrderQty: 100; rohs: Y-EX
最新价格近期成交41单+
数量价格(含税)
1¥12.9574
10¥6.0893
100¥5.9763
500¥5.8508
1000¥5.7253
5000¥5.6123
库存:748交期:2 weeks起订:100增量:1
数量:
X
5.9763(单价)
合计:
¥597.63
商品满500包邮
商品参数
参数项参数值
参数项参数值
ConfigurationDual
Forward Transconductance - Min27.5 S
Transistor PolarityN-Channel
Vgs th - Gate-Source Threshold Voltage1.2 V
TechnologySi
Rds On - Drain-Source Resistance14.4 mOhms
Typical Turn-Off Delay Time18.6 ns
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time9.4 ns
Package / CaseDFN-8
MXHTS85412999
ManufacturerON Semiconductor
Product TypeMOSFET
TARIC8541290000
Product CategoryMOSFET
Factory Pack Quantity1500
Qg - Gate Charge10 nC
Mounting StyleSMD/SMT
JPHTS8541290100
CNHTS8541290000
BrandON Semiconductor
CAHTS8541290000
Maximum Operating Temperature+ 175 C
Minimum Operating Temperature- 55 C
Channel ModeEnhancement
PackagingReel
PackagingCut Tape
PackagingMouseReel
SubcategoryMOSFETs
RoHS Details
Fall Time27.5 ns
DescriptionMOSFET T6 60V LL S08FL DS
ImageON Semiconductor NTMFD5C674NLT1G
Unit Weight0.004799 oz
USHTS8541290095
Pd - Power Dissipation37 W
Vds - Drain-Source Breakdown Voltage60 V
Number of Channels2 Channel
Rise Time32.1 ns