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NTMFD5C674NLT1G
厂牌：onsemi
包装：REEL 1
类目：元器件 > 分立器件 > MOSFET
编号：B000052948341
描述：onsemi N沟道增强型功率 MOSFET, 2个元件/芯片, Vds=60 V, Id=42 A, 8针, DFN
商品参数
参数项参数值
参数项参数值
ConfigurationDual
Forward Transconductance - Min27.5 S
Transistor PolarityN-Channel
Vgs th - Gate-Source Threshold Voltage1.2 V
TechnologySi
Rds On - Drain-Source Resistance14.4 mOhms
Typical Turn-Off Delay Time18.6 ns
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time9.4 ns
Package / CaseDFN-8
MXHTS85412999
ManufacturerON Semiconductor
Product TypeMOSFET
TARIC8541290000
Product CategoryMOSFET
Factory Pack Quantity1500
Qg - Gate Charge10 nC
Mounting StyleSMD/SMT
JPHTS8541290100
CNHTS8541290000
BrandON Semiconductor
CAHTS8541290000
Maximum Operating Temperature+ 175 C
Minimum Operating Temperature- 55 C
Channel ModeEnhancement
PackagingReel
PackagingCut Tape
PackagingMouseReel
SubcategoryMOSFETs
RoHS Details
Fall Time27.5 ns
DescriptionMOSFET T6 60V LL S08FL DS
ImageON Semiconductor NTMFD5C674NLT1G
Unit Weight0.004799 oz
USHTS8541290095
Pd - Power Dissipation37 W
Vds - Drain-Source Breakdown Voltage60 V
Number of Channels2 Channel
Rise Time32.1 ns