在线商城 
SIS892ADN-T1-GE3
厂牌：Vishay
包装：REEL 1
类目：元器件 > 分立器件 > MOSFET
编号：B000052948413
描述：MOSFET 100V Vds 20V Vgs PowerPAK 1212-8
商品参数
参数项参数值
参数项参数值
KRHTS8541299000
Forward Transconductance - Min19 S
ConfigurationSingle
Height1.04 mm
Transistor PolarityN-Channel
Id - Continuous Drain Current28 A
Length3.3 mm
Vgs th - Gate-Source Threshold Voltage1.5 V
TechnologySi
Rds On - Drain-Source Resistance27 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time16 ns
Vgs - Gate-Source Voltage- 20 V, + 20 V
RoHS Details
Package / CasePowerPAK-1212-8
JPHTS8541290100
Typical Turn-On Delay Time10 ns
MXHTS85412999
Minimum Operating Temperature- 55 C
CAHTS8541290000
ImageVishay Semiconductors SIS892ADN-T1-GE3
Factory Pack Quantity3000
Mounting StyleSMD/SMT
TARIC8541290000
PackagingMouseReel
PackagingReel
PackagingCut Tape
Width3.3 mm
Maximum Operating Temperature+ 150 C
BrandVishay Semiconductors
ManufacturerVishay
Product CategoryMOSFET
SubcategoryMOSFETs
DescriptionMOSFET 100V Vds 20V Vgs PowerPAK 1212-8
Qg - Gate Charge19.5 nC
Product TypeMOSFET
SeriesSIS
TradenameTrenchFET, PowerPAK
Channel ModeEnhancement
USHTS8541290095
Fall Time9 ns
CNHTS8541290000
Part # AliasesSIS892ADN-GE3
Pd - Power Dissipation52 W
Vds - Drain-Source Breakdown Voltage100 V
Number of Channels1 Channel
Rise Time13 ns