参数项参数值
参数项参数值
Forward Transconductance - Min38 S
TechnologySi
ConfigurationSingle
Id - Continuous Drain Current80 A
Transistor PolarityN-Channel
Vgs th - Gate-Source Threshold Voltage2.2 V
Rds On - Drain-Source Resistance7 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time24 ns
Width5.15 mm
Vgs - Gate-Source Voltage- 20 V, + 20 V
MXHTS85412999
Typical Turn-On Delay Time13 ns
Height1.27 mm
Length5.9 mm
KRHTS8541299000
CNHTS8541290000
ImageInfineon Technologies BSC070N10NS5ATMA1
Qg - Gate Charge30 nC
Package / CaseTDSON-8
CAHTS8541290000
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
Mounting StyleSMD/SMT
Channel ModeEnhancement
JPHTS8541290100
RoHS Details
PackagingReel
SeriesOptiMOS 5
Fall Time6 ns
PackagingMouseReel
PackagingCut Tape
TARIC8541290000
BrandInfineon Technologies
Unit Weight0.017870 oz
Factory Pack Quantity5000
Product CategoryMOSFET
SubcategoryMOSFETs
ManufacturerInfineon
Product TypeMOSFET
Pd - Power Dissipation83 W
Part # AliasesBSC070N10NS5 SP001241596
DescriptionMOSFET N-Ch 100V 90A TDSON-8
USHTS8541290095
Vds - Drain-Source Breakdown Voltage100 V
TradenameOptiMOS
Number of Channels1 Channel
Rise Time5 ns
Moisture Sensitivity Level1 (Unlimited)