NTH4L013N120M3S

NTH4L013N120M3S

厂牌：ONSemi

包装：--

类目：--

编号：B000052949915

描述：DISCRETE SIC M3S 1200V 13MOHM

商品参数

参数项参数值

参数项参数值

PackagingTube

Package / CaseTO-247-4

Mounting TypeThrough Hole

Operating Temperature-55°C ~ 175°C (TJ)

TechnologySiCFET (Silicon Carbide)

FET TypeN-Channel

Current - Continuous Drain (Id) @ 25°C151A (Tc)

Rds On (Max) @ Id, Vgs20mOhm @ 75A, 18V

FET Feature-

Power Dissipation (Max)682W (Tc)

Vgs(th) (Max) @ Id4.4V @ 37mA

Supplier Device PackageTO-247-4

Grade-

Drive Voltage (Max Rds On, Min Rds On)18V

Vgs (Max)+22V, -10V

Drain to Source Voltage (Vdss)1200 V

Gate Charge (Qg) (Max) @ Vgs254 nC @ 18 V

Input Capacitance (Ciss) (Max) @ Vds5813 pF @ 800 V

Qualification-

Moisture Sensitivity LevelNot Applicable