参数项参数值
参数项参数值
ConfigurationDual
Id - Continuous Drain Current100 mA
Transistor PolarityN-Channel
Vgs th - Gate-Source Threshold Voltage800 mV
TechnologySi
Height0.9 mm
Rds On - Drain-Source Resistance8 Ohms
Transistor Type2 N-Channel MOSFET
Typical Turn-Off Delay Time80 ns
Width1.25 mm
Vgs - Gate-Source Voltage- 20 V, + 20 V
MXHTS85412999
Typical Turn-On Delay Time15 ns
Package / CaseSOT-363-6
Length2 mm
PackagingCut Tape
PackagingMouseReel
PackagingReel
KRHTS8541299000
CAHTS8541290000
RoHS Details
JPHTS8541290100
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
ProductMOSFET Small Signal
Channel ModeEnhancement
CNHTS8541210000
ImageROHM Semiconductor UM6K1NTN
SubcategoryMOSFETs
TARIC8541290000
Product CategoryMOSFET
DescriptionMOSFET 2N-CH 30V .1A SOT-363
Unit Weight0.000265 oz
BrandROHM Semiconductor
Factory Pack Quantity3000
Fall Time80 ns
ManufacturerROHM Semiconductor
SeriesUM6K1N
Product TypeMOSFET
USHTS8541290095
Part # AliasesUM6K1N
Pd - Power Dissipation150 mW
TypeMOSFET
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels2 Channel
Rise Time35 ns
Moisture Sensitivity Level1 (Unlimited)