参数项参数值
参数项参数值
Forward Transconductance - Min1.2 S
ConfigurationSingle
Id - Continuous Drain Current1.5 A
Transistor PolarityP-Channel
Vgs th - Gate-Source Threshold Voltage2.5 V
TechnologySi
Rds On - Drain-Source Resistance115 mOhms
Transistor Type1 P-Channel
Typical Turn-Off Delay Time40 ns
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time12 ns
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
TARIC8541290000
ImageROHM Semiconductor RRF015P03GTL
MXHTS85412999
KRHTS8541299000
ManufacturerROHM Semiconductor
DescriptionMOSFET 4V Drive Pch MOSFET Drive Pch
CAHTS8541290000
Minimum Operating Temperature- 55 C
JPHTS8541290100
Qg - Gate Charge6.4 nC
Package / CaseSOT-323-3
PackagingCut Tape
PackagingMouseReel
PackagingReel
CNHTS8541290000
Channel ModeEnhancement
BrandROHM Semiconductor
Factory Pack Quantity3000
RoHS Details
SeriesRRF015P03
Fall Time13 ns
SubcategoryMOSFETs
Product CategoryMOSFET
Product TypeMOSFET
USHTS8541290095
Pd - Power Dissipation800 mW
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels1 Channel
Rise Time8 ns