FGH75T65SQD-F155

厂牌：ONSEMI

包装：TUBE 1

类目：元器件 > 分立器件 > IGBT晶体管

编号：B000052986651

描述：IGBT SINGLE N-CH 650V 150A TO-247-3; DC Collector Current:150A; Collector Emitter Saturation Voltage Vce(on):1.6V; Power Dissipation Pd:375W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Temperature Max:175蚓; Product Range:Trench Series; Automotive Qualification Standard:-; MSL:-; SVHC:Lead (27-Jun-2018)

商品参数

参数项参数值

Gate-Emitter Leakage Current+/- 400 nA

Collector- Emitter Voltage VCEO Max650 V

ConfigurationSingle

TechnologySi

Maximum Gate Emitter Voltage20 V

Collector-Emitter Saturation Voltage1.6 V

MXHTS85412999

KRHTS8541299000

Package / CaseTO-247-3

Mounting StyleThrough Hole

JPHTS8541290100

CAHTS8541290000

Minimum Operating Temperature- 55 C

Maximum Operating Temperature+ 175 C

PackagingTube

Factory Pack Quantity450

CNHTS8541290000

BrandON Semiconductor / Fairchild

Product TypeIGBT Transistors

DescriptionIGBT Transistors 650V FS4 Trench IGBT

ImageON Semiconductor / Fairchild FGH75T65SQD-F155

SeriesFGH75T65SQD

TARIC8541290000

ManufacturerON Semiconductor

Product CategoryIGBT Transistors

RoHS Details

Unit Weight0.225401 oz

SubcategoryIGBTs

Continuous Collector Current at 25 C150 A

Part # AliasesFGH75T65SQD_F155

Pd - Power Dissipation375 W

USHTS8541290095