参数项参数值
参数项参数值
DC Current Gain hFE Max125 at 2 mA, 5 V
Gain Bandwidth Product fT100 MHz
Collector- Base Voltage VCBO80 V
Maximum DC Collector Current0.2 A
Collector- Emitter Voltage VCEO Max65 V
TechnologySi
ConfigurationSingle
Transistor PolarityPNP
Emitter- Base Voltage VEBO5 V
DC Collector/Base Gain hfe Min125
QualificationAEC-Q101
Mounting StyleSMD/SMT
Width1.4 mm
Height1 mm
JPHTS8541210101
Length3 mm
Maximum Operating Temperature+ 150 C
MXHTS85412101
Factory Pack Quantity3000
KRHTS8541219000
Minimum Operating Temperature- 65 C
CAHTS8541210000
Package / CaseSOT-23-3
CNHTS8541210000
PackagingReel
PackagingCut Tape
PackagingMouseReel
TARIC8541210000
Unit Weight0.000282 oz
RoHS Details
Pd - Power Dissipation250 mW
BrandNexperia
USHTS8541210075
DescriptionBipolar Transistors - BJT PNP GP 65V 100mA
ImageNexperia BC856A,215
Part # Aliases933589720215
Product TypeBJTs - Bipolar Transistors
Product CategoryBipolar Transistors - BJT
ManufacturerNexperia
SubcategoryTransistors