SI6562CDQ-T1-GE3

厂牌：VISHAY(威世)

包装：--

类目：元器件 > 分立器件 > MOSFET

编号：B000052992143

描述：Trans MOSFET N/P-CH 20V 5.7A/5.1A 8-Pin TSSOP T/R

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商品参数

参数项参数值

KRHTS8541299000

Forward Transconductance - Min17 S, 22 S

ConfigurationDual

Transistor PolarityN-Channel, P-Channel

Id - Continuous Drain Current6.7 A, 6.1 A

Vgs th - Gate-Source Threshold Voltage600 mV

TechnologySi

Rds On - Drain-Source Resistance22 mOhms, 30 mOhms

Transistor Type1 N-Channel, 1 P-Channel

Typical Turn-Off Delay Time25 ns, 45 ns

Vgs - Gate-Source Voltage- 8 V, + 8 V

Package / CaseTSSOP-8

JPHTS8541210101

Typical Turn-On Delay Time12 ns, 30 ns

MXHTS85412101

RoHS Details

ImageVishay Semiconductors SI6562CDQ-T1-GE3

Minimum Operating Temperature- 55 C

CAHTS8541210000

Factory Pack Quantity3000

TARIC8541290000

PackagingCut Tape

PackagingReel

PackagingMouseReel

Mounting StyleSMD/SMT

ManufacturerVishay

BrandVishay Semiconductors

Maximum Operating Temperature+ 150 C

SubcategoryMOSFETs

DescriptionMOSFET -20V Vds 12V Vgs TSSOP-8 N&P PAIR

Product CategoryMOSFET

Qg - Gate Charge15 nC, 34 nC

TradenameTrenchFET

Product TypeMOSFET

Channel ModeEnhancement

USHTS8541290095

Unit Weight0.005573 oz

Fall Time10 ns, 15 ns

CNHTS8541290000

Part # AliasesSI6562CDQ-GE3

Pd - Power Dissipation1.6 W, 1.7 W

Vds - Drain-Source Breakdown Voltage20 V

Number of Channels2 Channel

Rise Time10 ns, 25 ns