参数项参数值
参数项参数值
DC Current Gain hFE Max180
Gain Bandwidth Product fT3.2 GHz
Collector- Base Voltage VCBO20 V
Maximum DC Collector Current0.05 A
Collector- Emitter Voltage VCEO Max11 V
Continuous Collector Current50 mA
TechnologySi
ConfigurationSingle
Transistor PolarityNPN
Collector-Emitter Saturation Voltage0.5 V
Emitter- Base Voltage VEBO3 V
DC Collector/Base Gain hfe Min56
Width1.25 mm
Height0.8 mm
Maximum Operating Temperature+ 150 C
CAHTS8541290000
MXHTS85412999
Length2 mm
KRHTS8541299000
TARIC8541290000
ManufacturerROHM Semiconductor
Package / CaseSC-70-3
JPHTS8541290100
CNHTS8541290000
Mounting StyleSMD/SMT
PackagingCut Tape
PackagingReel
PackagingMouseReel
RoHS Details
Unit Weight0.000219 oz
ImageROHM Semiconductor 2SC4083T106P
Series2SC4083
Pd - Power Dissipation200 mW
BrandROHM Semiconductor
Factory Pack Quantity3000
Product TypeBJTs - Bipolar Transistors
Product CategoryBipolar Transistors - BJT
SubcategoryTransistors
DescriptionBipolar Transistors - BJT NPN 11V 50MA
USHTS8541290095