参数项参数值
参数项参数值
DC Current Gain hFE Max2700
Gain Bandwidth Product fT250 MHz
Collector- Base Voltage VCBO60 V
Maximum DC Collector Current0.15 A
Collector- Emitter Voltage VCEO Max50 V
Continuous Collector Current0.15 A
TechnologySi
ConfigurationSingle
Transistor PolarityNPN
Collector-Emitter Saturation Voltage0.3 V
Emitter- Base Voltage VEBO12 V
DC Collector/Base Gain hfe Min820
CAHTS8541290000
Width1.25 mm
Height0.8 mm
Length2 mm
MXHTS85412999
Maximum Operating Temperature+ 150 C
KRHTS8541299000
Product CategoryBipolar Transistors - BJT
SubcategoryTransistors
ManufacturerROHM Semiconductor
DescriptionBipolar Transistors - BJT NPN 50V 150MA
JPHTS8541290100
Package / CaseSC-70-3
Mounting StyleSMD/SMT
CNHTS8541290000
PackagingCut Tape
PackagingReel
PackagingMouseReel
ImageROHM Semiconductor 2SD2351T106W
RoHS Details
TARIC8541290000
Unit Weight0.000219 oz
Series2SD2351
Product TypeBJTs - Bipolar Transistors
Factory Pack Quantity3000
Pd - Power Dissipation200 mW
BrandROHM Semiconductor
USHTS8541290095