参数项参数值
参数项参数值
DC Current Gain hFE Max400
Gain Bandwidth Product fT100 MHz
Collector- Base Voltage VCBO50 V
ConfigurationSingle
Maximum DC Collector Current1 A
Collector- Emitter Voltage VCEO Max45 V
Continuous Collector Current0.5 A
Transistor PolarityNPN
TechnologySi
Emitter- Base Voltage VEBO5 V
Collector-Emitter Saturation Voltage0.7 V
DC Collector/Base Gain hfe Min100
QualificationAEC-Q101
Mounting StyleSMD/SMT
MXHTS85412999
CNHTS8541210000
KRHTS8541299000
Unit Weight0.003951 oz
JPHTS8541290100
Package / CaseSOT-23-3
CAHTS8541290000
PackagingCut Tape
PackagingReel
PackagingMouseReel
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 65 C
SeriesBC817-16Q / -25Q / -40Q
Product TypeBJTs - Bipolar Transistors
DescriptionBipolar Transistors - BJT General Purpose Transistor
ManufacturerDiodes Incorporated
Factory Pack Quantity3000
BrandDiodes Incorporated
TARIC8541210000
ImageDiodes Incorporated BC817-25Q-7-F
Product CategoryBipolar Transistors - BJT
RoHS Details
SubcategoryTransistors
Pd - Power Dissipation350 mW
USHTS8541210095
Moisture Sensitivity Level1 (Unlimited)