参数项参数值
参数项参数值
DC Current Gain hFE Max800
Gain Bandwidth Product fT300 MHz
Collector- Base Voltage VCBO50 V
Maximum DC Collector Current200 mA
Collector- Emitter Voltage VCEO Max45 V
Continuous Collector Current100 mA
TechnologySi
ConfigurationSingle
Transistor PolarityNPN
Emitter- Base Voltage VEBO6 V
DC Collector/Base Gain hfe Min600
JPHTS8541100901
MXHTS85411001
PackagingReel
PackagingCut Tape
PackagingMouseReel
BrandDiodes Incorporated
KRHTS8541219000
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Package / CaseSOT-23-3
Minimum Operating Temperature- 65 C
CAHTS8541100090
CNHTS8541210000
Unit Weight0.000282 oz
TARIC8541100000
RoHS Details
Pd - Power Dissipation310 mW
SeriesBC847C
Factory Pack Quantity10000
DescriptionBipolar Transistors - BJT NPN SM SS Trans 50Vcbo 45Vceo 200mA
ImageDiodes Incorporated BC847C-13-F
Product CategoryBipolar Transistors - BJT
Product TypeBJTs - Bipolar Transistors
SubcategoryTransistors
ManufacturerDiodes Incorporated
USHTS8541100080
Moisture Sensitivity Level1 (Unlimited)