参数项参数值
参数项参数值
Gain Bandwidth Product fT150 MHz
Collector- Base Voltage VCBO12 V
Maximum DC Collector Current4 A
Collector- Emitter Voltage VCEO Max12 V
Continuous Collector Current4 A
TechnologySi
ConfigurationSingle
Transistor PolarityNPN
Collector-Emitter Saturation Voltage0.4 V
Emitter- Base Voltage VEBO5 V
KRHTS8541299000
Width3.7 mm
Height1.65 mm
Maximum Operating Temperature+ 150 C
JPHTS8541290100
Minimum Operating Temperature- 55 C
Length6.7 mm
MXHTS85412999
TARIC8541290000
Product CategoryBipolar Transistors - BJT
Package / CaseSOT-223-4
CNHTS8541290000
Mounting StyleSMD/SMT
CAHTS8541290000
PackagingReel
PackagingCut Tape
PackagingMouseReel
Unit Weight0.003951 oz
RoHS Details
SeriesFZT688
ImageDiodes Incorporated FZT688BTA
BrandDiodes Incorporated
ManufacturerDiodes Incorporated
Pd - Power Dissipation2 W
Product TypeBJTs - Bipolar Transistors
Factory Pack Quantity1000
SubcategoryTransistors
USHTS8541290075
DescriptionBipolar Transistors - BJT NPN High Gain & Crnt