参数项参数值
参数项参数值
TechnologySi
ConfigurationDual
Id - Continuous Drain Current6.6 A
Transistor PolarityN-Channel, P-Channel
Vgs th - Gate-Source Threshold Voltage- 700 mV, + 700 mV
Rds On - Drain-Source Resistance29 mOhms
Transistor Type1 N-Channel, 1 P-Channel
Vgs - Gate-Source Voltage- 12 V, + 12 V
Minimum Operating Temperature- 55 C
CAHTS8541290000
Width3.9 mm
Height1.75 mm
MXHTS85412999
Maximum Operating Temperature+ 150 C
KRHTS8541299000
Qg - Gate Charge18 nC
Product CategoryMOSFET
SubcategoryMOSFETs
ManufacturerInfineon
DescriptionMOSFET MOSFT DUAL N/PCh 20V 6.6A
JPHTS8541290100
Package / CaseSO-8
Channel ModeEnhancement
Mounting StyleSMD/SMT
CNHTS8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
ImageInfineon Technologies IRF7317TRPBF
RoHS Details
TARIC8541290000
Unit Weight0.019048 oz
Product TypeMOSFET
Pd - Power Dissipation2 W
Factory Pack Quantity4000
BrandInfineon Technologies
Vds - Drain-Source Breakdown Voltage20 V
USHTS8541290095
Number of Channels2 Channel
Moisture Sensitivity Level1 (Unlimited)