参数项参数值
参数项参数值
ConfigurationSingle
Id - Continuous Drain Current4.5 A
Transistor PolarityN-Channel
TechnologySi
Rds On - Drain-Source Resistance1.5 Ohms
Height4.83 mm
Vgs - Gate-Source Voltage- 20 V, + 20 V
Width9.65 mm
Length10.67 mm
Mounting StyleSMD/SMT
Factory Pack Quantity1000
CNHTS8541290000
MXHTS85412999
KRHTS8541299000
Unit Weight0.050717 oz
Qg - Gate Charge38 nC
JPHTS8541290100
Package / CaseTO-263-3
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
PackagingTube
SeriesIRF
Channel ModeEnhancement
Product CategoryMOSFET
TARIC8541290000
ManufacturerVishay
DescriptionMOSFET 500V N-CH HEXFET D2-PA
BrandVishay Semiconductors
ImageVishay Semiconductors IRF830SPBF
SubcategoryMOSFETs
RoHS Details
Product TypeMOSFET
USHTS8541290095
Pd - Power Dissipation74 W
Number of Channels1 Channel
Moisture Sensitivity Level1 (Unlimited)