参数项参数值
参数项参数值
DC Current Gain hFE Max250 at 10 mA, 2 V
Gain Bandwidth Product fT132 MHz
Collector- Base Voltage VCBO100 V
ConfigurationDual
Maximum DC Collector Current3 A
Collector- Emitter Voltage VCEO Max50 V
Continuous Collector Current3 A
Transistor PolarityNPN
TechnologySi
Emitter- Base Voltage VEBO7.5 V
Height0.95 mm
Width3.1 mm
Collector-Emitter Saturation Voltage135 mV
DC Collector/Base Gain hfe Min250 at 10 mA, 2 V, 300 at 1 A, 2 V, 150 at 3 A, 2 V, 50 at 5 A, 2 V
Length3.1 mm
BrandDiodes Incorporated
Mounting StyleSMD/SMT
Package / CaseMSOP-8
Maximum Operating Temperature+ 150 C
PackagingCut Tape
PackagingMouseReel
PackagingReel
Minimum Operating Temperature- 55 C
SeriesZXT12
Product TypeBJTs - Bipolar Transistors
DescriptionBipolar Transistors - BJT Dual 50V NPN
ManufacturerDiodes Incorporated
Factory Pack Quantity1000
ImageDiodes Incorporated ZXT12N50DXTA
Product CategoryBipolar Transistors - BJT
RoHS Details
Unit Weight0.004938 oz
SubcategoryTransistors
Pd - Power Dissipation870 mW