DMN1032UCB4-7

DMN1032UCB4-7

厂牌：DIODES(美台)

包装：REEL 1

类目：元器件 > 分立器件 > MOSFET

编号：B000052996278

描述：绝缘栅场效应管（MOSFET）

商品参数

参数项参数值

参数项参数值

ConfigurationSingle

Transistor PolarityN-Channel

Id - Continuous Drain Current4.8 A

TechnologySi

Vgs th - Gate-Source Threshold Voltage800 mV

KRHTS8541299000

Factory Pack Quantity3000

Rds On - Drain-Source Resistance38 mOhms

Transistor Type1 N-Channel

Typical Turn-Off Delay Time24 ns

CAHTS8541290000

Package / CaseU-WLB1010-4

Vgs - Gate-Source Voltage- 8 V, + 8 V

Typical Turn-On Delay Time3.3 ns

ManufacturerDiodes Incorporated

Product TypeMOSFET

Minimum Operating Temperature- 55 C

MXHTS85412999

JPHTS8541290100

RoHS Details

BrandDiodes Incorporated

Mounting StyleSMD/SMT

TARIC8541290000

USHTS8541290095

ImageDiodes Incorporated DMN1032UCB4-7

Maximum Operating Temperature+ 150 C

PackagingMouseReel

PackagingReel

PackagingCut Tape

Product CategoryMOSFET

SubcategoryMOSFETs

Qg - Gate Charge3.2 nC

DescriptionMOSFET 20V N-Ch Enh Mode FET 12V 8Vgss 0.9W

SeriesDMN10

Channel ModeEnhancement

Unit Weight0.001875 oz

Fall Time9 ns

CNHTS8541290000

Pd - Power Dissipation1.16 W

Vds - Drain-Source Breakdown Voltage12 V

Number of Channels1 Channel

Rise Time5.6 ns