SUD23N06-31-GE3

SUD23N06-31-GE3

厂牌：VISHAY(威世)

包装：REEL 1

类目：元器件 > 分立器件 > MOSFET

编号：B000052996359

描述：MOSFET N-CH 60V 9.1A TO-252

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商品参数

参数项参数值

参数项参数值

Forward Transconductance - Min20 S

ConfigurationSingle

Height2.38 mm

Transistor PolarityN-Channel

Id - Continuous Drain Current21.4 A

Vgs th - Gate-Source Threshold Voltage1 V

TechnologySi

Length6.73 mm

Rds On - Drain-Source Resistance31 mOhms

Transistor Type1 N-Channel

Typical Turn-Off Delay Time30 ns

Vgs - Gate-Source Voltage- 20 V, + 20 V

Package / CaseTO-252-3

JPHTS8541290100

Typical Turn-On Delay Time8 ns

MXHTS85423901

RoHS Details

Minimum Operating Temperature- 55 C

ImageVishay Semiconductors SUD23N06-31-GE3

CAHTS8541290000

Factory Pack Quantity2000

Mounting StyleSMD/SMT

Width6.22 mm

TARIC8541290000

PackagingReel

PackagingMouseReel

PackagingCut Tape

ManufacturerVishay

BrandVishay Semiconductors

Maximum Operating Temperature+ 150 C

SubcategoryMOSFETs

DescriptionMOSFET N-Ch MOSFET 60V 31 mohm @ 10V

Product CategoryMOSFET

Qg - Gate Charge11 nC

SeriesSUD

TradenameTrenchFET

Product TypeMOSFET

Channel ModeEnhancement

USHTS8542390001

Unit Weight0.050717 oz

Fall Time25 ns

CNHTS8541210000

Pd - Power Dissipation31.25 W

Vds - Drain-Source Breakdown Voltage60 V

Number of Channels1 Channel

Rise Time15 ns