参数项参数值
参数项参数值
ConfigurationSingle
KRHTS8541299000
JPHTS8541290100
CAHTS8541290000
ImageSTMicroelectronics ST13009
Collector- Base Voltage VCBO700 V
DescriptionBipolar Transistors - BJT HV fast-switching NPN power trans
Maximum DC Collector Current12 A
Collector- Emitter Voltage VCEO Max400 V
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO12 V
Minimum Operating Temperature- 65 C
Height9.15 mm
Length10.4 mm
PackagingTube
Package / CaseTO-220-3
Product CategoryBipolar Transistors - BJT
Factory Pack Quantity1000
Maximum Operating Temperature+ 150 C
Width4.6 mm
Mounting StyleThrough Hole
Product TypeBJTs - Bipolar Transistors
BrandSTMicroelectronics
RoHS Details
MXHTS85412101
ManufacturerSTMicroelectronics
TARIC8541210000
SeriesST13009
SubcategoryTransistors
USHTS8541290075
Unit Weight0.081130 oz
CNHTS8541210000
Pd - Power Dissipation100000 mW