参数项参数值
参数项参数值
Forward Transconductance - Min38 S
TechnologySi
ConfigurationSingle
Id - Continuous Drain Current9.9 A
Transistor PolarityN-Channel
Vgs th - Gate-Source Threshold Voltage1.8 V
Rds On - Drain-Source Resistance15 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time33 ns
Width3.9 mm
Vgs - Gate-Source Voltage- 12 V, + 12 V
MXHTS85412999
Typical Turn-On Delay Time6 ns
Height1.75 mm
KRHTS8541299000
ImageInfineon / IR IRL6342TRPBF
Qg - Gate Charge11 nC
CNHTS8541290000
Package / CaseSO-8
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
CAHTS8541290000
Channel ModeEnhancement
JPHTS8541290100
RoHS Details
Fall Time14 ns
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541290000
BrandInfineon / IR
Unit Weight0.017870 oz
Factory Pack Quantity4000
SubcategoryMOSFETs
Product CategoryMOSFET
ManufacturerInfineon
Product TypeMOSFET
Pd - Power Dissipation2.5 W
DescriptionMOSFET MOSFT 30V 9.9A 14.6mOhm 2.5V cpbl
USHTS8541290095
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels1 Channel
Rise Time12 ns