参数项参数值
参数项参数值
DC Current Gain hFE Max800
Gain Bandwidth Product fT100 MHz
MXHTS85412101
ConfigurationSingle
Collector- Base Voltage VCBO45 V
Maximum DC Collector Current1 A
Continuous Collector Current1 A
Transistor PolarityNPN
TechnologySi
Emitter- Base Voltage VEBO5 V
KRHTS8541219000
Collector-Emitter Saturation Voltage0.5 V
DC Collector/Base Gain hfe Min150
Mounting StyleSMD/SMT
Length3.05 mm
Width1.4 mm
Minimum Operating Temperature- 55 C
JPHTS8541210101
Height1 mm
Package / CaseSOT-23-3
CAHTS8541210000
CNHTS8541210000
Maximum Operating Temperature+ 150 C
PackagingCut Tape
PackagingMouseReel
PackagingReel
ImageDiodes Incorporated MMBT123S-7-F
Factory Pack Quantity3000
BrandDiodes Incorporated
Product CategoryBipolar Transistors - BJT
TARIC8541210000
SeriesMMBT123
RoHS Details
DescriptionBipolar Transistors - BJT 18V 300mW
Product TypeBJTs - Bipolar Transistors
ManufacturerDiodes Incorporated
SubcategoryTransistors
USHTS8541210075
Unit Weight0.000282 oz
Pd - Power Dissipation300 mW