参数项参数值
参数项参数值
Forward Transconductance - Min90 s
ConfigurationSingle
Id - Continuous Drain Current95 A
Transistor PolarityN-Channel
Vgs th - Gate-Source Threshold Voltage3.7 V
TechnologySi
Height15.65 mm
Rds On - Drain-Source Resistance4.9 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time44 ns
Width4.4 mm
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time12 ns
Package / CaseTO-220-3
MXHTS85412999
Minimum Operating Temperature- 55 C
Length10 mm
PackagingTube
TARIC8541290000
KRHTS8541299000
JPHTS8541290100
CAHTS8541290000
Mounting StyleThrough Hole
Qg - Gate Charge75 nC
Maximum Operating Temperature+ 175 C
ImageInfineon Technologies IRFB7545PBF
RoHS Details
Channel ModeEnhancement
CNHTS8541290000
Product CategoryMOSFET
BrandInfineon Technologies
Unit Weight0.211644 oz
Fall Time43 ns
Product TypeMOSFET
Factory Pack Quantity1000
DescriptionMOSFET MOSFET N CH 60V 95A TO-220AB
ManufacturerInfineon
SubcategoryMOSFETs
USHTS8541290095
Pd - Power Dissipation125 W
TradenameStrongIRFET
Vds - Drain-Source Breakdown Voltage60 V
Number of Channels1 Channel
Rise Time72 ns