参数项参数值
参数项参数值
Forward Transconductance - Min427 S
ConfigurationSingle
TechnologySi
Id - Continuous Drain Current209 A
Transistor PolarityN-Channel
Vgs th - Gate-Source Threshold Voltage1 V
Rds On - Drain-Source Resistance2 MOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time54 ns
Vgs - Gate-Source Voltage- 20 V, + 20 V
Width5.05 mm
MXHTS85412999
Height0.7 mm
Typical Turn-On Delay Time35 ns
Length6.35 mm
KRHTS8541299000
CNHTS8541290000
RoHS Details
Qg - Gate Charge76 nC
DescriptionMOSFET 40V Single N-Channel HEXFET
Package / CaseDirectFET-ME
Maximum Operating Temperature+ 150 C
Mounting StyleSMD/SMT
Minimum Operating Temperature- 55 C
CAHTS8541290000
Channel ModeEnhancement
JPHTS8541290100
Fall Time47 ns
BrandInfineon / IR
TARIC8541290000
PackagingReel
PackagingCut Tape
PackagingMouseReel
ImageInfineon / IR IRL7486MTRPbF
Product CategoryMOSFET
SubcategoryMOSFETs
ManufacturerInfineon
Factory Pack Quantity4800
Product TypeMOSFET
Pd - Power Dissipation104 W
USHTS8541290095
Vds - Drain-Source Breakdown Voltage40 V
TradenameStrongIRFET
Number of Channels1 Channel
Rise Time110 ns