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商品参数
参数项参数值
参数项参数值
DC Current Gain hFE Max200 at 10 mA, 2 V
Gain Bandwidth Product fT215 MHz
Collector- Base Voltage VCBO50 V
Maximum DC Collector Current1 A
Collector- Emitter Voltage VCEO Max50 V
Continuous Collector Current1 A
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO5 V
Width1.26 mm
Collector-Emitter Saturation Voltage160 mV
Height1 mm
Length2.2 mm
MXHTS85412101
KRHTS8541219000
Mounting StyleSMD/SMT
Package / CaseSOT-323-3
JPHTS8541210101
CAHTS8541210000
Maximum Operating Temperature+ 150 C
PackagingReel
PackagingCut Tape
PackagingMouseReel
Minimum Operating Temperature- 55 C
Factory Pack Quantity3000
CNHTS8541210000
BrandDiodes Incorporated
Product TypeBJTs - Bipolar Transistors
DescriptionBipolar Transistors - BJT NPN Super323
ImageDiodes Incorporated ZUMT619TA
SeriesZUMT619
TARIC8541210000
ManufacturerDiodes Incorporated
Product CategoryBipolar Transistors - BJT
RoHS Details
Unit Weight0.000176 oz
SubcategoryTransistors
Pd - Power Dissipation500 mW
USHTS8541210095