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IPD80R1K0CEATMA1
厂牌：Infineon(英飞凌)
包装：REEL 1
类目：元器件 > 分立器件 > MOSFET
编号：B000052997081
描述：N-Channel 800 V 0.95 Ω 31 nC CoolMOS CE Power Transistor - DPAK
商品参数
参数项参数值
参数项参数值
ConfigurationSingle
Id - Continuous Drain Current5.7 A
Transistor PolarityN-Channel
Vgs th - Gate-Source Threshold Voltage3 V
TechnologySi
Rds On - Drain-Source Resistance950 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time72 ns
Height2.3 mm
Vgs - Gate-Source Voltage- 20 V, + 20 V
Width6.22 mm
Length6.5 mm
Typical Turn-On Delay Time25 ns
Mounting StyleSMD/SMT
CNHTS8541290000
MXHTS85412999
Factory Pack Quantity2500
KRHTS8541299000
Unit Weight0.139332 oz
Qg - Gate Charge31 nC
JPHTS8541290100
Package / CasePG-TO-252-3
CAHTS8541290000
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
PackagingCut Tape
PackagingReel
PackagingMouseReel
SeriesCoolMOS CE
Channel ModeEnhancement
Product TypeMOSFET
Product CategoryMOSFET
DescriptionMOSFET N-Ch 800V 5.7A DPAK-2
TARIC8541290000
ManufacturerInfineon
BrandInfineon Technologies
ImageInfineon Technologies IPD80R1K0CEATMA1
Fall Time8 ns
RoHS Details
SubcategoryMOSFETs
Pd - Power Dissipation83 W
USHTS8541290095
Part # AliasesIPD80R1K0CE SP001130974
TradenameCoolMOS
Vds - Drain-Source Breakdown Voltage800 V
Number of Channels1 Channel
Rise Time15 ns