参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Id - Continuous Drain Current2 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage-
Typical Turn-On Delay Time6 us
Rds On - Drain-Source Resistance200 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time34 us
MXHTS85412999
KRHTS8541299000
JPHTS8541290100
CAHTS8541290000
Mounting StyleSMD/SMT
Qg - Gate Charge-
Package / CaseSOT-223-3
Minimum Operating Temperature- 40 C
Maximum Operating Temperature+ 125 C
ProductMOSFET Small Signal
CNHTS8541290000
ImageDiodes Incorporated ZXMS6005DGTA
PackagingCut Tape
PackagingReel
PackagingMouseReel
TARIC8541290000
RoHS Details
Channel ModeEnhancement
Factory Pack Quantity1000
Fall Time19 us
SeriesZXMS600
SubcategoryMOSFETs
Product CategoryMOSFET
BrandDiodes Incorporated
Unit Weight0.003951 oz
ManufacturerDiodes Incorporated
DescriptionMOSFET 60V N-Ch Intellifet 200mohm 2A 490mJ
Product TypeMOSFET
USHTS8541290095
Pd - Power Dissipation3 W
Vds - Drain-Source Breakdown Voltage60 V
TradenameIntelliFET
Number of Channels1 Channel
Rise Time14 us