参数项参数值
参数项参数值
TechnologySi
ConfigurationSingle
Id - Continuous Drain Current500 mA
Transistor PolarityN-Channel
Rds On - Drain-Source Resistance4.5 Ohms
Transistor Type1 N-Channel
Vgs - Gate-Source Voltage- 30 V, + 30 V
Typical Turn-On Delay Time6.7 ns
Minimum Operating Temperature- 65 C
Qg - Gate Charge7 nC
SubcategoryMOSFETs
Package / CaseTO-92-3
Channel ModeEnhancement
Mounting StyleThrough Hole
Maximum Operating Temperature+ 150 C
Fall Time12 ns
Unit Weight0.007760 oz
ImageSTMicroelectronics STQ1NC45R-AP
BrandSTMicroelectronics
Pd - Power Dissipation3.1 W
Factory Pack Quantity2000
Product TypeMOSFET
ManufacturerSTMicroelectronics
Product CategoryMOSFET
DescriptionMOSFET PTD HIGH VOLTAGE
Vds - Drain-Source Breakdown Voltage450 V
Number of Channels1 Channel
Rise Time4 ns