参数项参数值
参数项参数值
ConfigurationSingle
Id - Continuous Drain Current3.2 A
Transistor PolarityN-Channel
Vgs th - Gate-Source Threshold Voltage1.8 V
TechnologySi
Height1.1 mm
Rds On - Drain-Source Resistance200 mOhms
Transistor Type1 N-Channel
Width1.5 mm
Vgs - Gate-Source Voltage- 20 V, + 20 V
Package / CaseTSOP-6
Mounting StyleSMD/SMT
Minimum Operating Temperature- 55 C
Length3 mm
PackagingMouseReel
PackagingReel
PackagingCut Tape
ImageInfineon / IR IRLMS1503TRPBF
MXHTS85412999
KRHTS8541299000
DescriptionMOSFET MOSFT 30V 3.2A 100mOhm 6.4nC LogLvl
CAHTS8541290000
ManufacturerInfineon
Qg - Gate Charge6.4 nC
JPHTS8541290100
Maximum Operating Temperature+ 150 C
TARIC8541290000
CNHTS8541290000
Channel ModeEnhancement
Factory Pack Quantity3000
RoHS Details
Unit Weight0.000705 oz
SubcategoryMOSFETs
BrandInfineon / IR
Product CategoryMOSFET
Product TypeMOSFET
USHTS8541290095
Pd - Power Dissipation1.7 W
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels1 Channel